Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
2N7002DW-TP
Manufacturer
MCCManufacturer Product Number
2N7002DW-TP
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 60V |
| Input Capacitance | 5 pF |
| Power | 0.3W |
| Drain-Source On-Resistance | 3 Ω |
| Drain-Source Saturation Current | 0.34A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 504,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 3000+ | $ 0.1239 | |
| 6000+ | $ 0.1114 | |
| 9000+ | $ 0.1058 | |
| 15000+ | $ 0.0989 | |
| 21000+ | $ 0.0947 | |
| 30000+ | $ 0.0905 | |
| 75000+ | $ 0.0822 | |
| 150000+ | $ 0.0766 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
2N7002DW-VB
--
Vbsemi
2N7002DWH6327
场效应管(MOSFET) 500mW 60V 300mA 2个N沟道 SC-70-6(SOT-363)
Infineon
2N7002DWH6327-MS
类型：2个N沟道@@漏源电压(Vdss)：60V@@连续漏极电流(Id)：300mA@@功率(Pd)：280mW@@导通电阻(RDS(on)@Vgs,Id)：1.8Ω@10V,300mA
MSKSEMI
2N7002DWH6327XT
MOSFET OptiMOS Small Signal Transistor
Infineon