Manufacturer
InfineonManufacturer Product Number
SPD04P10PLGBTMA1
Description
晶体管: P-MOSFET; 单极; -100V; -4.2A; 38W; PG-TO252-3; SIPMOS™
Manufacturer Standard Lead Time
3-5
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃ ~ 175℃ |
| Drain-Source Voltage | 100 V |
| Gate Charge | 16nC@10V |
| Continuous Drain Current | 4.2A |
| Power | 38W |
| On-Resistance | 850mΩ@3A, 10V |
| Threshold Voltage | 2V@380µA |
| Input Capacitance | 372pF@25V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5960 |
Minimum:1/Multiple:1
Total amount: