Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SPD04N50C3ATMA1
Manufacturer
InfineonManufacturer Product Number
SPD04N50C3ATMA1
Description
MOSFET LOW POWER_LEGACY
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Gate Charge | 22nC@10V |
| Power | 50W |
| Input Capacitance | 470pF @ 25V |
| Drain-Source Voltage | 500V |
| Continuous Drain Current | 4.5A |
| On-Resistance | 950mΩ @ 2.8A, 10V |
| Threshold Voltage | 3.9V @ 200µA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 253
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.6067 | |
| 10+ | $ 2.1905 | |
| 100+ | $ 1.5610 | |
| 500+ | $ 1.2408 | |
| 1000+ | $ 1.1377 | |
| 2500+ | $ 1.1252 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSPD04N60C3ATMA1
表面贴装 N 沟道 600V 4.5A（Tc） 50W（Tc） PG-TO252-3
Infineon
SPD04N60C3ATMA1
Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) DPAK T/R
Infineon
SPD04N80C3ATMA1
800V, 4A, 1.3OHMS, D2PAK
Infineon
SPD04N80C3ATMA1
MOSFET LOW POWER_LEGACY
Infineon
