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IRFR3410TRPBF
Manufacturer
InfineonManufacturer Product Number
IRFR3410TRPBF
Description
场效应管(MOSFET) 3W；110W 100V 31A 1个N沟道 TO-252-2(DPAK)
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 100V |
| Drain-Source Saturation Current | 30A |
| Drain-Source On-Resistance | 0.039Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 19,827
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4456 | |
| 100+ | $ 0.3384 | |
| 1000+ | $ 0.2924 | |
| 2000+ | $ 0.2757 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
IRFR3410TRPBF-VB
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Vbsemi
IRFR3411TRPBF
Single N-Channel 100 V 44 mOhm 71 nC 130 W Silicon SMT Mosfet - TO-252-3
Infineon
IRFR3411TRPBF
场效应管(MOSFET) 130W 100V 32A 1个N沟道 DPAK
Infineon
IRFR3411TRPBF-HXY
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HUAXUANYANG
