Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IRF640NSTRLPBF
Manufacturer
InfineonManufacturer Product Number
IRF640NSTRLPBF
Description
Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Saturation Current | 18A |
| Gate-Source Breakdown Voltage | 200V |
| Drain-Source On-Resistance | 0.15Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 18,048
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.7028 | |
| 10+ | $ 2.3631 | |
| 100+ | $ 1.5945 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
IRF640PBF
原装正品
VISHAY
IRF640PBF
场效应管(MOSFET) 125W 200V 18A 1个N沟道 ITO-220AB-3
VISHAY
IRF640PBF-BE3
Trans MOSFET N-CH 200V 18A
VISHAY
IRF640PBF-VB
--
Vbsemi
