Manufacturer
InfineonManufacturer Product Number
IRF5801TRPBF
Description
场效应管(MOSFET) 2W 200V 600mA 1个N沟道 TSOP-6
Manufacturer Standard Lead Time
2-3
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 200V |
| Drain-Source Saturation Current | 0.6A |
| Drain-Source On-Resistance | 2.2Ω |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2367 | |
| 100+ | $ 0.1894 | |
| 750+ | $ 0.1671 | |
| 1500+ | $ 0.1560 | |
| 3000+ | $ 0.1462 |
Minimum:1/Multiple:1
Total amount: