Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPP80R600P7XKSA1
Manufacturer
InfineonManufacturer Product Number
IPP80R600P7XKSA1
Description
Single N-Channel 800 V 600 mOhm 20 nC CoolMOS� Power Mosfet - TO-220-3
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Continuous Drain Current | 8A |
| Drain-Source Voltage | 800V |
| Power | 60W |
| Gate Charge | 20nC@10V |
| On-Resistance | 600mΩ @ 3.4A, 10V |
| Threshold Voltage | 3.5V@170µA |
| Input Capacitance | 570pF@500V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 20
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.6404 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
IPP80R750P7XKSA1
Single N-Channel 800 V 750 mOhm 17 nC CoolMOS� Power Mosfet - TO-220-3
Infineon
IPP80R900P7XKSA1
Single N-Channel 800 V 900 mOhm 15 nC CoolMOS� Power Mosfet - TO-220-3
Infineon
IPP90R1K2C3XKSA1
晶体管: N-MOSFET; 单极; 900V; 3.2A; 83W; PG-TO220; CoolMOS™
Infineon
IPP90R1K2C3XKSA2
N-Channel 900V 5.1A (Tc) 83W (Tc) Through Hole PG-TO220-3-1
Infineon