Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPN80R900P7ATMA1
Manufacturer
InfineonManufacturer Product Number
IPN80R900P7ATMA1
Description
场效应管(MOSFET) 7W 800V 6A 1个N沟道 SOT-223-3
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 800V |
| Drain-Source On-Resistance | 0.9Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,940
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.8035 | |
| 100+ | $ 0.6656 | |
| 750+ | $ 0.6099 | |
| 1500+ | $ 0.5751 | |
| 3000+ | $ 0.5487 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPN95R2K0P7ATMA1
表面贴装 N 沟道 950V 4A（Tc） 7W（Tc） PG-SOT223
Infineon
IPN95R3K7P7ATMA1
表面贴装 N 沟道 950V 2A（Tc） 6W（Tc） PG-SOT223
Infineon
IPN95R3K7P7ATMA1
场效应管(MOSFET) IPN95R3K7P7ATMA1 SOT-223
Infineon
IPort-3
--
ZLG
