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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPG20N04S412ATMA1

Manufacturer

Infineon

Manufacturer Product Number

IPG20N04S412ATMA1

Description

Infineon OptiMOS T2 系列双 Si N沟道 MOSFET IPG20N04S412ATMA1, 20 A, Vds=40 V, 8引脚 TDSON封装

Manufacturer Standard Lead Time

10-15

Detailed Description

Infineon OptiMOS T2 系列双 Si N沟道 MOSFET IPG20N04S412ATMA1, 20 A, Vds=40 V, 8引脚 TDSON封装

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃ ~ 175℃
Drain-Source Voltage	40V
Type	Dual N-Channel
Continuous Drain Current	20 A
Power	41 W
Threshold Voltage	4 V @ 15 µA
Input Capacitance	1470pF@25V
On-Resistance	12.2mΩ@17A, 10V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 4,045

Quantity	Unit Price	Ext Price
1+	$ 0.8425

Price For：Each

Minimum:1/Multiple:1

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Infineon