Manufacturer
InfineonManufacturer Product Number
IPD90N03S4L03ATMA1
Description
Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; Idm: 360A
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 90 A |
| Power | 94W |
| Gate Charge | 75nC@10V |
| Input Capacitance | 5100pF@25V |
| Threshold Voltage | 2.2V@45µA |
| On-Resistance | 3.3mΩ@90A,10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.5567 | |
| 10+ | $ 1.6362 | |
| 100+ | $ 1.1085 | |
| 500+ | $ 0.8829 | |
| 1000+ | $ 0.8105 |
Minimum:1/Multiple:1
Total amount: