Manufacturer
InfineonManufacturer Product Number
IPD80R600P7ATMA1
Description
场效应管(MOSFET) 60W 800V 8A 1个N沟道 TO-252-3
Manufacturer Standard Lead Time
2-3
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Continuous Drain Current | 8A |
| Drain-Source Voltage | 800V |
| Power | 60W |
| Gate Charge | 20nC@10V |
| On-Resistance | 600mΩ @ 3.4A, 10V |
| Threshold Voltage | 3.5V@170µA |
| Input Capacitance | 570pF@500V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9734 | |
| 100+ | $ 0.8035 | |
| 1250+ | $ 0.7255 | |
| 2500+ | $ 0.6893 |
Minimum:1/Multiple:1
Total amount: