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IPD80R1K0CEATMA1
Manufacturer
InfineonManufacturer Product Number
IPD80R1K0CEATMA1
Description
场效应管(MOSFET) 83W 800V 5.7A 1个N沟道 TO-252-3
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Gate Charge | 31 nC @ 10 V |
| Drain-Source Voltage | 800V |
| Power | 83W |
| Continuous Drain Current | 5.7A |
| Threshold Voltage | 3.9 V @ 250 µA |
| On-Resistance | 950 mΩ@3.6 A, 10 V |
| Input Capacitance | 785 pF@100 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 19
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5208 | |
| 100+ | $ 0.4303 | |
| 1250+ | $ 0.3885 | |
| 2500+ | $ 0.3676 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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