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IPD65R380E6ATMA1
Manufacturer
InfineonManufacturer Product Number
IPD65R380E6ATMA1
Description
晶体管: N-MOSFET; 单极; 650V; 10.6A; 83W; PG-TO252-3; CoolMOS™
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 650V |
| Gate Charge | 39 nC @ 10 V |
| Power | 83W |
| Continuous Drain Current | 10.6 A |
| Threshold Voltage | 3.5 V @ 320 µA |
| Input Capacitance | 710pF@100V |
| On-Resistance | 380 mΩ @ 3.2 A, 10 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,192
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.2432 | |
| 10+ | $ 2.0874 | |
| 100+ | $ 1.4162 | |
| 500+ | $ 1.1335 | |
| 1000+ | $ 0.9135 | |
| 5000+ | $ 0.8954 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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