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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPD65R190C7ATMA1

Manufacturer

Infineon

Manufacturer Product Number

IPD65R190C7ATMA1

Description

晶体管: N-MOSFET; 单极; 650V; 3.2A; 28W; PG-TO252-3; CoolMOS™

Manufacturer Standard Lead Time

3-5

Detailed Description

晶体管: N-MOSFET; 单极; 650V; 3.2A; 28W; PG-TO252-3; CoolMOS™

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃~150℃
Type	N-channel
Drain-Source Voltage	650V
Continuous Drain Current	13A
Gate Charge	23nC@10V
Power	72W
On-Resistance	190mΩ@5.7A, 10V
Threshold Voltage	4V@290µA
Input Capacitance	1150pF@400V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 85

Quantity	Unit Price	Ext Price
1+	$ 1.8521

Price For：Each

Minimum:1/Multiple:1

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