Manufacturer
InfineonManufacturer Product Number
IPD60R650CEAUMA1
Description
场效应管(MOSFET) 82W 600V 9.9A 1个N沟道 TO-252-3
Manufacturer Standard Lead Time
2-3
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Operating Temperature | -40℃~150℃ |
| Gate Charge | 20.5nC @ 10V |
| On-Resistance | 650mΩ @ 2.4A, 10V |
| Threshold Voltage | 3.5V @ 200µA |
| Input Capacitance | 440pF @ 100V |
| Power | 82 W |
| Continuous Drain Current | 9.9A |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4554 | |
| 100+ | $ 0.3774 | |
| 1250+ | $ 0.3384 | |
| 2500+ | $ 0.3217 |
Minimum:1/Multiple:1
Total amount: