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IPD60R650CEAUMA1
Manufacturer
InfineonManufacturer Product Number
IPD60R650CEAUMA1
Description
Infineon CoolMOS CE 系列 N沟道 MOSFET IPD60R650CEAUMA1, 9.9 A, Vds=650 V, 3引脚 TO-252封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Operating Temperature | -40℃~150℃ |
| Gate Charge | 20.5nC @ 10V |
| On-Resistance | 650mΩ @ 2.4A, 10V |
| Threshold Voltage | 3.5V @ 200µA |
| Input Capacitance | 440pF @ 100V |
| Power | 82 W |
| Continuous Drain Current | 9.9A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,578
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.2268 | |
| 10+ | $ 0.9581 | |
| 100+ | $ 0.6406 | |
| 500+ | $ 0.4971 | |
| 1000+ | $ 0.4512 | |
| 2500+ | $ 0.3843 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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