Manufacturer
InfineonManufacturer Product Number
IPD60R600P7SAUMA1
Description
场效应管(MOSFET) 30W 600V 6A 1个N沟道 TO-252-2
Manufacturer Standard Lead Time
2-3
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Operating Temperature | -40℃~150℃ |
| Power | 30W |
| Continuous Drain Current | 6A |
| Gate Charge | 9nC@10V |
| Threshold Voltage | 4V@80µA |
| Input Capacitance | 363 pF @ 400 V |
| On-Resistance | 600mΩ@1.7A, 10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2312 |
Minimum:1/Multiple:1
Total amount: