Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPD60R280CFD7ATMA1
Manufacturer
InfineonManufacturer Product Number
IPD60R280CFD7ATMA1
Description
表面贴装 N 沟道 650V 51A（Tc） 51W（Tc） PG-TO252-3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Continuous Drain Current | 9A |
| Gate Charge | 18 nC @ 10 V |
| Power | 51W |
| On-Resistance | 280mΩ@3.6A, 10V |
| Threshold Voltage | 4.5V@180µA |
| Input Capacitance | 807pF@400V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 27
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.0455 | |
| 10+ | $ 1.9649 | |
| 100+ | $ 1.3480 | |
| 500+ | $ 1.1823 | |
| 1000+ | $ 0.9636 | |
| 5000+ | $ 0.9302 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPD60R280P7ATMA1
Single N-Channel 650 V 280 mOhm 18 nC CoolMOS� Power Mosfet - DPAK
Infineon
IPD60R280P7ATMA1
--
Infineon
IPD60R280P7S
DISCRETE_MOSFET_POWER MOSFET
Infineon
IPD60R280P7S
场效应管(MOSFET) 53W 600V 12A 1个N沟道 TO-252-3
Infineon
