Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPD35N10S3L26ATMA1
Manufacturer
InfineonManufacturer Product Number
IPD35N10S3L26ATMA1
Description
N-Channel 100 V 26 mOhm OptiMOS�-T Power-Transistor -PG-TO252-3-11
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Gate Charge | 39 nC @ 10 V |
| Continuous Drain Current | 35A |
| Power | 71W |
| Threshold Voltage | 2.4V@39µA |
| Input Capacitance | 2700pF@25V |
| On-Resistance | 24mΩ @ 35A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,430
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6420 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPD35N12S3L24ATMA1
Trans MOSFET N-CH 120V 35A Automotive
Infineon
IPD35N12S3L24ATMA1
Trans MOSFET N-CH 120V 35A Automotive
Infineon
IPD380P06NMATMA1
MOSFET P-CH 60V 35A TO252-3
Infineon
IPD40DP06NMATMA1
--
Infineon
