Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPD30N08S2L21ATMA1
Manufacturer
InfineonManufacturer Product Number
IPD30N08S2L21ATMA1
Description
N-Channel 75 V 20.5 mOhm OptiMOS� Power-Transistor - PG-TO252-3-11
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 75 V |
| Drain-Source Saturation Current | 30A |
| Drain-Source On-Resistance | 0.026Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 36,720
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 4.4729 | |
| 10+ | $ 2.8895 | |
| 100+ | $ 1.9691 | |
| 500+ | $ 1.5750 | |
| 1000+ | $ 1.5485 | |
| 2500+ | $ 1.4469 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPD30N10S3L-34
MOSFET OptiMOS-T PWR TRANS 100V 30A
Infineon
IPD30N10S3L34ATMA1
IPD30N10S3L Series 100 V 31 mOhm OptiMOS�-T Power-Transistor - PG-TO252-3-11
Infineon
IPD30N12S3L31ATMA1
MOSFET N-CHANNEL 100+
Infineon
IPD30N12S3L31ATMA1
--
Infineon
