Manufacturer
InfineonManufacturer Product Number
IPB60R199CPATMA1
Description
N-Channel 650 V 0.199 Ohm CoolMOS� Power Transistor - PG-TO-263
Manufacturer Standard Lead Time
3-5
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Gate Charge | 43nC@10V |
| Continuous Drain Current | 16A |
| Power | 139W |
| On-Resistance | 199mΩ@9.9A, 10V |
| Threshold Voltage | 3.5V@660µA |
| Input Capacitance | 1520pF@100V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 6.7330 |
Minimum:1/Multiple:1
Total amount: