Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPB120P04P404ATMA2
Manufacturer
InfineonManufacturer Product Number
IPB120P04P404ATMA2
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 40V |
| Input Capacitance | 180pF |
| Drain-Source Saturation Current | 120A |
| Drain-Source On-Resistance | 0.0035Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,530
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 4.6177 | |
| 10+ | $ 3.0218 | |
| 50+ | $ 2.1167 | |
| 200+ | $ 1.9913 | |
| 500+ | $ 1.8632 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPB120P04P4L03ATMA1
Trans MOSFET P-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
Infineon
IPB120P04P4L03ATMA2
MOSFET P-CH 40V 120A TO263-3
Infineon
IPB123N10N3GATMA1
晶体管: N-MOSFET; 单极; 100V; 58A; 94W; PG-TO263-3; OptiMOS™ 3
Infineon
IPB144N12N3 G
--
Infineon
