Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPB100N12S305ATMA1
Manufacturer
InfineonManufacturer Product Number
IPB100N12S305ATMA1
Description
Trans MOSFET N-CH 120V 100A Automotive
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Power | 300W |
| Continuous Drain Current | 100A |
| Gate Charge | 185nC@10V |
| Drain-Source Voltage | 120 volt |
| On-Resistance | 5.1mΩ@100A，10V |
| Threshold Voltage | 4V@240µA |
| Input Capacitance | 11570pF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,244
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 11.1557 | |
| 10+ | $ 7.4571 | |
| 100+ | $ 5.3627 | |
| 500+ | $ 4.7834 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
IPB107N20N3 G
MOSFET，N沟道，200V，88A，TO263
Infineon
IPB107N20N3G
场效应管(MOSFET) 300W 200V 88A 1个N沟道 TO-263-3
Infineon
IPB107N20N3GATMA1
Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R
Infineon
IPB107N20N3GATMA1
N-Channel 200 V 10.7 mOhm OptiMOS�3 Power-Transistor -PG-TO-263-3
Infineon
