Manufacturer
InfineonManufacturer Product Number
IPB049NE7N3GATMA1
Description
晶体管: N-MOSFET; 单极; 75V; 80A; 150W; PG-TO263-3; OptiMOS™ 3
Manufacturer Standard Lead Time
3-5
Detailed Description
晶体管: N-MOSFET; 单极; 75V; 80A; 150W; PG-TO263-3; OptiMOS™ 3
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 75V |
| Power | 150W |
| Continuous Drain Current | 80A |
| Gate Charge | 68nC@10V |
| On-Resistance | 4.9mΩ@80A, 10V |
| Threshold Voltage | 3.8V@91µA |
| Input Capacitance | 4750pF@37.5V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.2335 |
Minimum:1/Multiple:1
Total amount: