Manufacturer
InfineonManufacturer Product Number
IPB035N08N3GATMA1
Description
晶体管: N-MOSFET; 单极; 80V; 100A; 214W; PG-TO263-3; OptiMOS™ 3
Manufacturer Standard Lead Time
10-15
Detailed Description
晶体管: N-MOSFET; 单极; 80V; 100A; 214W; PG-TO263-3; OptiMOS™ 3
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 80 V |
| Continuous Drain Current | 100A |
| On-Resistance | 3.5mΩ @ 100A, 10V |
| Power | 214 W |
| Gate Charge | 117 nC@10 V |
| Threshold Voltage | 3.5V@155µA |
| Input Capacitance | 8110pF@40V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 8.8886 | |
| 10+ | $ 5.9197 | |
| 100+ | $ 4.2305 |
Minimum:1/Multiple:1
Total amount: