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IPB020N04NGATMA1
Manufacturer
InfineonManufacturer Product Number
IPB020N04NGATMA1
Description
晶体管: N-MOSFET; 单极; 40V; 140A; 167W; PG-TO263-7; OptiMOS™ 3
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 40V |
| On-Resistance | 2 mΩ @ 100 A, 10 V |
| Continuous Drain Current | 140 A |
| Gate Charge | 120nC@10V |
| Power | 167W |
| Threshold Voltage | 4V@95µA |
| Input Capacitance | 9700pF@20V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.0749 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPB020N08N5ATMA1
晶体管: N-MOSFET; 单极; 80V; 120A; 300W; PG-TO263-7; OptiMOS™ 5
Infineon
IPB020N08N5ATMA1
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Infineon
IPB020N08N5ATMA1
晶体管: N-MOSFET; 单极; 80V; 120A; 300W; PG-TO263-7; OptiMOS™ 5
Infineon
IPB020N10N5
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Infineon
