Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPB019N08N3GATMA1
Manufacturer
InfineonManufacturer Product Number
IPB019N08N3GATMA1
Description
MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source On-Resistance | 0.0019Ω |
| Gate-Source Breakdown Voltage | 80V |
| Drain-Source Saturation Current | 180A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,758
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 12.7780 | |
| 10+ | $ 8.6073 | |
| 100+ | $ 6.2428 | |
| 500+ | $ 5.7401 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
IPB019N08N5(TOKMAS)
--
Tokmas
IPB019N08N5ATMA1
--
Infineon
IPB019N08NF2SATMA1
--
Infineon
IPB019N08NF2SATMA1
TRENCH 40
Infineon
