Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPB017N10N5LFATMA1
Manufacturer
InfineonManufacturer Product Number
IPB017N10N5LFATMA1
Description
表面贴装 N 沟道 100V 180A（Tc） 313W（Tc） PG-TO263-7
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 180A |
| Gate Charge | 195nC@10V |
| On-Resistance | 1.7mΩ@100A, 10V |
| Power | 313W |
| Threshold Voltage | 4.1V @ 270µA |
| Input Capacitance | 840pF @ 50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,387
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 8.6185 | |
| 10+ | $ 5.8139 | |
| 50+ | $ 4.3044 | |
| 200+ | $ 4.2180 | |
| 500+ | $ 4.1317 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPB018N10N5ATMA1
--
Infineon
IPB019N06L3GATMA1
Single N-Channel 60 V 250 W 166 nC Silicon Surface Mount Mosfet - PG-TO-263-3
Infineon
IPB019N08N3 G
--
Infineon
IPB019N08N3G(TOKMAS)
--
Tokmas
