Manufacturer
InfineonManufacturer Product Number
IPA65R190E6XKSA1
Description
晶体管: N-MOSFET; 单极; 650V; 20.2A; 34W; PG-TO220-3-FP; CoolMOS™
Manufacturer Standard Lead Time
3-5
Detailed Description
晶体管: N-MOSFET; 单极; 650V; 20.2A; 34W; PG-TO220-3-FP; CoolMOS™
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 650V |
| Continuous Drain Current | 20.2 A |
| Gate Charge | 73 nC @ 10 V |
| On-Resistance | 190 mΩ @ 7.3 A, 10 V |
| Threshold Voltage | 3.5 V @ 730 µA |
| Input Capacitance | 1620pF@100V |
| Power | 34 watt |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.4507 |
Minimum:1/Multiple:1
Total amount: