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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMYH200R100M1HXKSA1

Manufacturer

Infineon

Manufacturer Product Number

IMYH200R100M1HXKSA1

Description

Silicon Carbide MOSFET

Manufacturer Standard Lead Time

10-15

Detailed Description

Silicon Carbide MOSFET

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃ ~ 175℃
Type	N-channel
Continuous Drain Current	26 A
Power	217W
Drain-Source Voltage	2000V
Gate Charge	55nC@18V
On-Resistance	131mΩ@10A，18V
Threshold Voltage	5.5V@6mA

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 1,199

Quantity	Unit Price	Ext Price
1+	$ 17.0809
30+	$ 10.5262
120+	$ 9.3454

Price For：Each

Minimum:1/Multiple:1

Total amount:

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IMZ120R045M1XKSA1

原装正品

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