Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSZ440N10NS3GATMA1
Manufacturer
InfineonManufacturer Product Number
BSZ440N10NS3GATMA1
Description
N-Channel 100 V 44 mOhm OptiMOS�3 Power-Transistor - PG-TSDSON-8
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Power | 29W |
| Continuous Drain Current | 5.3 A, 18 A |
| Gate Charge | 9.1 nC @ 10 V |
| On-Resistance | 44mΩ@12A，10V |
| Threshold Voltage | 2.7V@12µA |
| Input Capacitance | 640pF@50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 11,684
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.4148 | |
| 10+ | $ 0.8898 | |
| 100+ | $ 0.5849 | |
| 500+ | $ 0.4540 | |
| 1000+ | $ 0.4122 | |
| 2000+ | $ 0.3760 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSZ520N15NS3GATMA1
场效应管(MOSFET) 57W 150V 21A 1个N沟道 TSDSON-8
Infineon
BSZ520N15NS3GATMA1
N-Channnel 150 V 52 mOhm OptiMOS�3 Power-Transistor - PG-TSDSON-8
Infineon
BSZ900N15NS3GATMA1
N-Channel 150 V 90 mOhm OptiMOS�3 Power-Transistor - PG-TSDSON-8
Infineon
BSZ900N15NS3GATMA1
N-Channel 150 V 90 mOhm OptiMOS�3 Power-Transistor - PG-TSDSON-8
Infineon