Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSZ42DN25NS3GATMA1
Manufacturer
InfineonManufacturer Product Number
BSZ42DN25NS3GATMA1
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 250V |
| Type | N-channel |
| Continuous Drain Current | 5A |
| Gate Charge | 5.5nC@10V |
| Power | 33.8W |
| Threshold Voltage | 4V @ 13µA |
| Input Capacitance | 430pF @ 100V |
| On-Resistance | 425mΩ @ 2.5A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 328
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.1321 | |
| 10+ | $ 0.9428 | |
| 30+ | $ 0.8397 | |
| 100+ | $ 0.7213 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSZ440N10NS3 G
MOSFET N-CH 100V 18A TSDSON-8
Infineon
BSZ440N10NS3G
场效应管(MOSFET) 29W 100V 5.3A 1个N沟道 TSDSON-8(3.3x3.3)
Infineon
BSZ440N10NS3GATMA1
N-Channel 100 V 44 mOhm OptiMOS�3 Power-Transistor - PG-TSDSON-8
Infineon
BSZ520N15NS3GATMA1
场效应管(MOSFET) 57W 150V 21A 1个N沟道 TSDSON-8
Infineon