Manufacturer
InfineonManufacturer Product Number
BSZ22DN20NS3GATMA1
Description
晶体管: N-MOSFET; 单极; 200V; 7A; 34W; PG-TSDSON-8; OptiMOS™ 3
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 200 V |
| Continuous Drain Current | 7A |
| Power | 34 watt |
| Gate Charge | 5.6nC @ 10V |
| On-Resistance | 225mΩ @ 3.5A, 10V |
| Threshold Voltage | 4V @ 13µA |
| Input Capacitance | 430pF @ 100V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.9398 | |
| 10+ | $ 1.2338 | |
| 100+ | $ 0.8230 | |
| 500+ | $ 0.6740 | |
| 1000+ | $ 0.6350 | |
| 5000+ | $ 0.6253 |
Minimum:1/Multiple:1
Total amount: