Manufacturer
InfineonManufacturer Product Number
BSZ180P03NS3GATMA1
Description
晶体管: P-MOSFET; 单极; -30V; -39.6A; 40W; PG-TSDSON-8; OptiMOS™ P3
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Gate Charge | 30nC@10V |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 9A,39.6A |
| Power | 2.1W,40W |
| On-Resistance | 18mΩ@20A, 10V |
| Threshold Voltage | 3.1V@48µA |
| Input Capacitance | 2220pF@15V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.9246 | |
| 50+ | $ 0.6058 | |
| 250+ | $ 0.4693 | |
| 1000+ | $ 0.3871 | |
| 3000+ | $ 0.3537 |
Minimum:1/Multiple:1
Total amount: