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BSZ160N10NS3G
Manufacturer
InfineonManufacturer Product Number
BSZ160N10NS3G
Description
场效应管(MOSFET) 2.1W 100V 8A 1个N沟道 TSDSON-8(3.3x3.3)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 8A |
| Power | 2.1W |
| On-Resistance | 16mΩ@10V, 20A |
| Threshold Voltage | 3.5V@33μA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 264
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.0207 | |
| 10+ | $ 0.8286 | |
| 30+ | $ 0.7325 | |
| 100+ | $ 0.6378 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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