Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSZ150N10LS3GATMA1
Manufacturer
InfineonManufacturer Product Number
BSZ150N10LS3GATMA1
Description
MOSFET MV POWER MOS
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Gate Charge | 35nC@10V |
| Continuous Drain Current | 40 A |
| Power | 2.1W, 63W |
| On-Resistance | 15mΩ@20A, 10V |
| Threshold Voltage | 2.1V@33µA |
| Input Capacitance | 2500pF@50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 9,727
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 1.3229 | |
| 50+ | $ 0.9678 | |
| 250+ | $ 0.8160 | |
| 1000+ | $ 0.7255 | |
| 3000+ | $ 0.6963 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSZ15DC02KDHXTMA1
场效应管(MOSFET) BSZ15DC02KDHXTMA1 TSDSON-8-FL
Infineon
BSZ15DC02KDHXTMA1
Trans MOSFET N/P-CH 20V 5.1A/3.2A Automotive T/R
Infineon
BSZ15DC02KDHXTMA1
Trans MOSFET N/P-CH 20V 5.1A/3.2A 8-Pin TSDSON T/R
Infineon
BSZ160N10NS3G
场效应管(MOSFET) 2.1W 100V 8A 1个N沟道 TSDSON-8(3.3x3.3)
Infineon