Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSZ110N08NS5ATMA1
Manufacturer
InfineonManufacturer Product Number
BSZ110N08NS5ATMA1
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 80 V |
| Power | 50W |
| Continuous Drain Current | 40 A |
| Gate Charge | 18.5nC@10V |
| On-Resistance | 11 mΩ @ 20 A, 10 V |
| Threshold Voltage | 3.8V @ 22µA |
| Input Capacitance | 1300pF @ 40V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 655
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9581 | |
| 10+ | $ 0.7826 | |
| 30+ | $ 0.6949 | |
| 100+ | $ 0.5835 | |
| 500+ | $ 0.5306 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSZ120P03NS3 G-VB
--
Vbsemi
BSZ120P03NS3GATMA1
场效应管(MOSFET) 2.1W；52W 30V 11A；40A 1个P沟道 TSDSON-8
Infineon
BSZ120P03NS3GATMA1
P-Channel 30 V 40 A 12 mO 30 nC OptiMOS 3 Power Mosfet - TSDSON-8
Infineon
BSZ120P03NS3GATMA1
P-Channel 30 V 40 A 12 mO 30 nC OptiMOS 3 Power Mosfet - TSDSON-8
Infineon