Manufacturer
InfineonManufacturer Product Number
BSZ110N06NS3GATMA1
Description
场效应管(MOSFET) 2.1W;50W 60V 20A 1个N沟道 TSDSON-8
Manufacturer Standard Lead Time
5-7个
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 60 V |
| Type | N-channel |
| Gate Charge | 33nC @ 10V |
| Continuous Drain Current | 20 A |
| On-Resistance | 11 mΩ @ 20 A, 10 V |
| Power | 2.1 W, 50 W |
| Threshold Voltage | 4 V @ 23 µA |
| Input Capacitance | 2700 pF @ 30 V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6768 | |
| 10+ | $ 0.5417 | |
| 30+ | $ 0.4721 | |
| 100+ | $ 0.3927 | |
| 500+ | $ 0.3551 | |
| 1000+ | $ 0.3342 |
Minimum:1/Multiple:1
Total amount: