Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSZ050N03LSGATMA1
Manufacturer
InfineonManufacturer Product Number
BSZ050N03LSGATMA1
Description
N-Channel 30 V 5 mOhm OptiMOSTM3 Power-MOSFET - PG-TSDSON-8
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2.2 V @ 250 μA |
| Gate Charge | 35nC@10V |
| On-Resistance | 5mΩ@20A, 10V |
| Continuous Drain Current | 16 A, 40 A |
| Power | 2.1 W, 50 W |
| Input Capacitance | 2800 pF@15 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,783
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.2171 | |
| 10+ | $ 0.7589 | |
| 100+ | $ 0.4957 | |
| 500+ | $ 0.3816 | |
| 1000+ | $ 0.3454 | |
| 2000+ | $ 0.3147 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSZ050N03MS G
MOSFET OptiMOS 3 M-SERIES
Infineon
BSZ050N03MSG
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ050N03MSG, 40 A, Vds=30 V, 8引脚 TSDSON封装
Infineon
BSZ050N03MSGATMA1
N-Channel 30 V 40 A 4.5 mO 34 nC OptiMOS 3 Power Mosfet - TSDSON-8
Infineon
BSZ0589NSATMA1
表面贴装 N 沟道 30V 17A（Ta） 2.1W（Ta） PG-TDSON-8
Infineon