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BSZ018NE2LSATMA1
Manufacturer
InfineonManufacturer Product Number
BSZ018NE2LSATMA1
Description
N-Channel 25 V 1.8 mOhm OptiMOSTM Power-MOSFET - PG-TSDSON-8
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Threshold Voltage | 2V@250μA |
| Gate Charge | 39 nC @ 10 V |
| Power | 2.1W, 69W |
| Drain-Source Voltage | 25V |
| On-Resistance | 1.8mΩ @ 30A, 10V |
| Continuous Drain Current | 23A, 40A |
| Input Capacitance | 2800pF@12V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,345
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.8857 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSZ018NE2LSI
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Infineon
BSZ018NE2LSIATMA1
N-Channel 25 V 1.8 mOhm OptiMOSTM Power-MOSFET - PG-TSDSON-8
Infineon
BSZ018NE2LSIATMA1
N-Channel 25 V 1.8 mOhm OptiMOSTM Power-MOSFET - PG-TSDSON-8
Infineon
BSZ019N03LS
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Infineon