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BSS308PEH6327XTSA1
Manufacturer
InfineonManufacturer Product Number
BSS308PEH6327XTSA1
Description
场效应管(MOSFET) 500mW 30V 2A 1个P沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source Saturation Current | 2A |
| Input Capacitance | 18pF |
| Drain-Source On-Resistance | 0.08Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 6,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1184 | |
| 200+ | $ 0.0808 | |
| 1500+ | $ 0.0724 | |
| 3000+ | $ 0.0668 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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BSS314PEH6327
场效应管(MOSFET) 500mW 30V 1.5A 1个P沟道 SOT-23
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MOSFET OptiMOS -P 3 Small Signal Transistor
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BSS314PEH6327XTSA1
晶体管: P-MOSFET; 单极; -30V; -1.5A; 500mW; PG-SOT23; OptiMOS™ P3
Infineon