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BSS127H6327XTSA2
Manufacturer
InfineonManufacturer Product Number
BSS127H6327XTSA2
Description
场效应管(MOSFET) 500mW 600V 21mA 1个N沟道 SOT-23
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 600V |
| Input Capacitance | 1.5pF |
| Drain-Source Saturation Current | 0.021A |
| Drain-Source On-Resistance | 600Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,235
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.1128 | |
| 50+ | $ 0.0933 | |
| 150+ | $ 0.0836 | |
| 500+ | $ 0.0752 | |
| 3000+ | $ 0.0585 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSS127IXTSA1
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Infineon
BSS127IXTSA1
场效应管(MOSFET) 500mW 600V 21mA 1个N沟道 SOT-23
Infineon
BSS127S-7
原装正品，假一罚十
Diodes
BSS127S-7
Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61/1.25W; SOT23
Diodes