Manufacturer
InfineonManufacturer Product Number
BSS123NH6327XTSA1
Description
场效应管(MOSFET) 500mW 100V 190mA 1个N沟道 TO-236-3
Manufacturer Standard Lead Time
2-3
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 100V |
| Power | 0.5W |
| Drain-Source Saturation Current | 0.19 A |
| Drain-Source On-Resistance | 6 Ω |
| Input Capacitance | 3.1pF |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0696 | |
| 200+ | $ 0.0446 | |
| 1500+ | $ 0.0390 | |
| 3000+ | $ 0.0334 |
Minimum:1/Multiple:1
Total amount: