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BSP372NH6327
Manufacturer
InfineonManufacturer Product Number
BSP372NH6327
Description
场效应管(MOSFET) 1.8W 100V 1.8A 1个N沟道 SOT-223-4
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 1.8W |
| Gate-Source Breakdown Voltage | 100V |
| Drain-Source Saturation Current | 1.8 A |
| Input Capacitance | 28pF |
| Drain-Source On-Resistance | 0.23Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,123
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2757 | |
| 50+ | $ 0.2103 | |
| 1000+ | $ 0.1922 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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BSP373NH6327XTSA1
场效应管(MOSFET) 1.8W 100V 1.8A 1个N沟道 SOT-223-4
Infineon