Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSP317PH6327XTSA1
Manufacturer
InfineonManufacturer Product Number
BSP317PH6327XTSA1
Description
绝缘栅场效应管（MOSFET）
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Continuous Drain Current | 430mA |
| Power | 1.8W |
| Gate Charge | 15.1nC@10V |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 250V |
| On-Resistance | 4Ω@430mA，10V |
| Threshold Voltage | 2V @ 370µA |
| Input Capacitance | 262pF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3746 | |
| 50+ | $ 0.2841 | |
| 1000+ | $ 0.2604 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSP318S
--
TECH PUBLIC
BSP318S-VB
--
Vbsemi
BSP318SH6327XTSA1
MOSFET SIPMOS Sm-Signal 60V 90mOhm 2.6A
Infineon
BSP318SH6327XTSA1
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known indus
Infineon