Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSL211SPH6327XTSA1
Manufacturer
InfineonManufacturer Product Number
BSL211SPH6327XTSA1
Description
P-Channel 20 V 67 mOhm OptiMOS�Small-Signal-Transistor-P-TSOP6-6
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source On-Resistance | 0.067Ω |
| Drain-Source Saturation Current | 4.7A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 11,377
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.6014 | |
| 10+ | $ 0.9845 | |
| 100+ | $ 0.6698 | |
| 500+ | $ 0.5138 | |
| 1000+ | $ 0.4637 | |
| 3000+ | $ 0.3648 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSL215C
--
TECH PUBLIC
BSL215CH6327
场效应管(MOSFET) 500mW 20V 1.5A 1个N沟道+1个P沟道 TSOP-6-1.5mm
Infineon
BSL215CH6327XTSA1
N & P Channel �20 V 150/140 mO OptiMOS 2 Small Signal Transistor - TSOP-6
Infineon
BSL302SNH6327XTSA1
表面贴装 N 沟道 30V 7.1A（Ta） 2W（Ta） P-TSOP6-6
Infineon