Manufacturer
InfineonManufacturer Product Number
BSC16DN25NS3GATMA1
Description
晶体管: N-MOSFET; 单极; 250V; 10.9A; 62.5W; PG-TDSON-8; OptiMOS™ 3
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 250V |
| Type | N-channel |
| Power | 62.5W |
| Gate Charge | 11.4nC@10V |
| Continuous Drain Current | 10.9A |
| On-Resistance | 165 mΩ @ 5.5 A, 10 V |
| Threshold Voltage | 4 V @ 32 µA |
| Input Capacitance | 920 pF @ 100 V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 4.7096 | |
| 10+ | $ 3.0330 | |
| 100+ | $ 2.0735 | |
| 500+ | $ 1.6627 | |
| 1000+ | $ 1.5304 | |
| 2000+ | $ 1.4914 |
Minimum:1/Multiple:1
Total amount: