Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSC146N10LS5ATMA1
Manufacturer
InfineonManufacturer Product Number
BSC146N10LS5ATMA1
Description
Infineon
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 44A |
| Gate Charge | 10 nC @ 4.5 V |
| Input Capacitance | 1300pF@50V |
| Power | 2.5W, 52W |
| On-Resistance | 14.6mΩ@22A, 10V |
| Threshold Voltage | 2.3V@23µA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,289
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.1405 | |
| 10+ | $ 0.9804 | |
| 25+ | $ 0.9246 | |
| 100+ | $ 0.8481 | |
| 250+ | $ 0.8021 | |
| 500+ | $ 0.7687 | |
| 1000+ | $ 0.7380 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSC150N03LD G
MOSFET 30V SO-8
Infineon
BSC150N03LDGATMA1
MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
Infineon
BSC150N03LDGATMA1
Dual N-Channel 30 V 15 mOhm OptiMOS�3 Power-Transistor -PG-TDSON-8
Infineon
BSC150N03LDGATMA1
场效应管(MOSFET) 26W 30V 8A 2个N沟道 TDSON-8
Infineon