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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BSC100N10NSFGATMA1

Manufacturer

Infineon

Manufacturer Product Number

BSC100N10NSFGATMA1

Description

N-Channel 100 V 10 mOhm OptiMOS�3 Power-Transistor - PG-TDSON-8

Manufacturer Standard Lead Time

10-15

Detailed Description

N-Channel 100 V 10 mOhm OptiMOS�3 Power-Transistor - PG-TDSON-8

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃~150℃
Type	N-channel
Drain-Source Voltage	100 V
Gate Charge	44nC@10V
Power	156W
Continuous Drain Current	11.4A,90A
On-Resistance	10mΩ@25A，10V
Threshold Voltage	4V@110µA
Input Capacitance	2900pF@50V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 10,000

Quantity	Unit Price	Ext Price
5000+	$ 0.8383

Price For：Each

Minimum:1/Multiple:1

Total amount:

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BSC109N10NS3 G

MOSFET N-Channel 100V MOSFET

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BSC109N10NS3 G

MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3

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BSC109N10NS3G(TOKMAS)

--

Tokmas

BSC109N10NS3GATMA1

MOSFET N-CH 100V 63A 8TDSON

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