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BSC093N04LSGATMA1
Manufacturer
InfineonManufacturer Product Number
BSC093N04LSGATMA1
Description
绝缘栅场效应管（MOSFET）
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Saturation Current | 13A |
| Gate-Source Breakdown Voltage | 40V |
| Drain-Source On-Resistance | 0.0093Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2465 | |
| 100+ | $ 0.1950 | |
| 1250+ | $ 0.1727 | |
| 2500+ | $ 0.1601 | |
| 5000+ | $ 0.1518 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSC093N15NS5
场效应管(MOSFET) 139W 150V 87A 1个N沟道 TDSON-8-EP(5x6)
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BSC093N15NS5(TOKMAS)
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BSC093N15NS5ATMA1
150v, 87A, 9.3 MOHM, PPAK SO-8
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BSC093N15NS5SCATMA1
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Infineon
